Three-Dimensional Multichip Module

ABSTRACT

A three-dimensional multichip module includes a first integrated circuit chip having at least one first high-temperature functional area and one first low-temperature functional area, and at least one second integrated circuit chip having a second high-temperature functional area and a second low-temperature functional area. The second high-temperature functional area is arranged opposite the first low-temperature functional area. As an alternative, at least one low-temperature chip having only one low-temperature functional area can also be arranged between the first and second chips.

This is a divisional application of U.S. patent application Ser. No.13/157,586, entitled “Three-Dimensional Multichip Module” which wasfiled on Jun. 10, 2011 and which is a divisional application of U.S.patent application Ser. No. 12/124,335, entitled “Three-DimensionalMultichip Module” which was filed on May 21, 2008 and which is acontinuation of International Application No. PCT/EP2006/067882, filedOct. 27, 2006, which designated the United States and was not publishedin English, and which is based on German Application No. 10 2005 056907.2, filed Nov. 29, 2005, all of which applications are herebyincorporated herein by reference.

TECHNICAL FIELD

The present invention relates to a three-dimensional multichip moduleand in particular to a multiprocessor data processing unit havingoptimized heat distribution and improved electrical properties.

BACKGROUND

In semiconductor technology, integrated circuits are usually produced ona semiconductor wafer, in which case, after the completion of theintegrated circuits in the wafer, the latter is separated into aplurality of individual chips or components. These “two-dimensional”chips are subsequently mounted, for example, onto a leadframe by meansof a bonding method or a so-called “flip-chip” bump method and packagedin a housing.

However, the use of such “two-dimensional” chips has disadvantagesincluding an increased space requirement, reduced yield, and undesirablehigh signal propagation times, capacitances and inductances. Therefore,so-called three-dimensional multichip modules are increasingly beingproduced, a plurality of such two-dimensional chips or components beingstacked one above another and electrically (and mechanically) connectedto one another.

Particularly when realizing multiprocessor data processing units havinga plurality of interconnected processors or processor cores, however,significant problems arise in this case in the context of the heatdistribution or heat dissipation. Therefore, particularly when producingmultiprocessor data processing units, two-dimensional chips are stillused on which two or more processor cores are situated in a mannerdistributed in the semiconductor component. In this case, however, thedisadvantages of inadequate signal propagation times once again arise,which lead to particular problems at present-day clock rates.

SUMMARY OF THE INVENTION

In one aspect, the invention provides a three-dimensional multichipmodule having improved thermal properties and signal propagation times.

In one embodiment, a three-dimensional multichip module having a firstintegrated circuit chip and at least one further integrated circuit chipeach having a high-temperature functional area and a low-temperaturefunctional area can be constructed in such a way that at least onelow-temperature chip having only one low-temperature functional area isarranged between the integrated circuit chips. In this way, undesirablefocusing or concentration of heat at one location in the multichipmodule can be reliably prevented and the heat distribution can be mademore uniform.

As an alternative, in the three-dimensional multichip module, the atleast one further high-temperature functional area of the at least onefurther integrated circuit chip can be arranged opposite a firstlow-temperature functional area of the first integrated circuit chip,whereby a balanced heat distribution can again be achieved in themultichip module.

Preferably, the abovementioned alternatives can also be combined withone another, whereby a further improvement in the heat distribution inthe multichip module can be realized.

Preferably, the integrated circuit chips are identical or constructed inidentical fashion, the arrangement of their high-temperature functionalareas being rotated by 90 degrees, 180 degrees, or 270 degrees, withrespect to one another or else being mirrored with respect to an axis ofsymmetry of the chip, whereby the production costs for a multichipmodule with optimum heat distribution can be significantly reduced.

Preferably, a high-temperature functional element in thehigh-temperature functional area of a first chip is electricallyconnected to a low-temperature functional element in the low-temperaturefunctional area of the further chip or of the low-temperature chip insuch a way that a total wiring length over a plurality of chips isshortened relative to a wiring length within the same chip. In additionto the optimized heat distribution, it is also possible in this way tosignificantly reduce the signal propagation times and hence undesirableparasitic capacitances or inductances, which leads to improvedelectrical properties, that is to say to faster switching times throughreduced signal delays (RC delays), of the overall circuit to berealized.

Preferably, the integrated circuit chips are microcontroller ormicroprocessor components whose high-temperature functional areasrepresent the processor cores and whose low-temperature functional areasrepresent their cache memories, registers and/or bus control units. Inthis way, it is possible to realize extremely powerful multiprocessordata processing units essentially using already existing microcontrolleror microprocessor components. Therefore, the production costs arelikewise significantly reduced.

In this case, the low-temperature chips inserted can be, in particular,cache memory components such as, e.g., SRAM memories, which haveextremely low evolution of heat, but can now be driven with minimalsignal propagation times. Other low-temperature functional areas orlow-temperature chips can alternatively be embodied as DRAM memories, asEEPROM, flash memories (NAND flash, NOR flash, etc.) or as othernonvolatile memory (NVM, e.g. as FERAM, MRAM, etc.). Combinations ofdifferent memory types are also possible, both on one chip and ondifferent chips.

For realizing the electrical connection between the respective chips itis possible to use not only face-to-face bonds but also through-Si viabonds or a combination of through-Si vias with micro-bumps.

As an alternative to the above-described microprocessors ormicrocontrollers, it is also possible to use power semiconductorcomponents having regions with high evolution of heat as integratedcircuit chips in multichip modules.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention is described in more detail below on the basis ofexemplary embodiments with reference to the drawings.

In the figures:

FIG. 1 shows a simplified perspective view of a multichip module inaccordance with a first exemplary embodiment;

FIG. 2 shows a simplified perspective view of a multichip module inaccordance with a second exemplary embodiment;

FIGS. 3A and 3B show a simplified perspective view of a multichip modulein accordance with a third and fourth exemplary embodiment; and

FIG. 4 shows a simplified plan view of a microprocessor component suchas can be used as integrated circuit chip in FIGS. 1 to 4.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

FIG. 1 shows a simplified perspective view of a three-dimensionalmultichip module in accordance with a first exemplary embodiment.

To put it more precisely, in accordance with FIG. 1, a first integratedcircuit chip IC1 and a second integrated circuit chip IC2 are producedby means of conventional production methods. Each of the chips has atleast one high-temperature functional area HTB1 and HTB2 with highemission of heat or evolution of heat. The remaining part of theintegrated circuit chips IC1 and IC2 has only low emission of heat orevolution of heat, for which reason these areas are referred to aslow-temperature functional areas NTB1 and NTB2.

For typical high-performance microprocessors, the average powerdensities nowadays are approximately 0.4-0.6 watt/mm² (ITRS Roadmap,2003 Edition, page 472) with a rising trend in the future. Locally overthe processor core, however, higher power densities of up to 3 watts/mm²or more can easily occur, whereas power densities that are less than 0.3watt/mm² occur in the memory areas. Accordingly, high-temperaturefunctional areas have power densities of greater than approximately 0.7watt/mm² and low-temperature functional areas have power densities ofless than 0.3 watt/mm².

By way of example, a microprocessor component IC in accordance with FIG.4 can be used as integrated circuit chip. Microprocessor components ofthis type usually have a processor core or central processor unit (CPU)as high-temperature functional area HTB, which has high evolution ofheat during operation. The remaining part of the microprocessorcomponent IC is referred to as low-temperature functional area NTB onaccount of its low emission of heat and is used, e.g., for a system bus1 and a memory bus 4, and also for data cache memory 2 and command cachememory 3, which are usually situated in direct proximity to theprocessor core or the high-temperature functional area HTB. Usually, awide variety of register areas 6 and 7 are also arranged in this areanear the processor. Furthermore, conventional microprocessor componentsIC of this type have a relatively large proportion of area for a datacache memory 5, which, as so-called L2 cache, has a plurality oftransistors for realizing e.g. an SRAM memory. A temperature evolutionin the units 1 to 7 and in particular of the data cache memory 5 of thelow-temperature functional area NTB is usually very small.

In accordance with FIG. 1, a three-dimensional multichip module, whichcan preferably comprise two identical microprocessor components inaccordance with FIG. 4, can now be realized in such a way that theintegrated circuit chips IC1 and IC2 are arranged opposite one anotherwith regard to their main surfaces and are both mechanically andelectrically connected to one another. In this case, the at least onefurther high-temperature functional area HTB2 of the second integratedcircuit chip IC2 is arranged directly opposite the first low-temperaturefunctional area NTB1 of the first integrated circuit chip IC1. With sucha realization of a three-dimensional multichip module comprising twointegrated circuit chips, an improved heat distribution is obtainedsince the heat-generating high-temperature functional areas do notdirectly touch one another or are not arranged directly opposite oneanother but rather are shifted spatially with respect to one another.

An arrangement of this type is preferably realized by using the same oridentical integrated circuit chips IC1 and IC2, which are mirrored withrespect to their axis A of symmetry illustrated in FIG. 1. In this case,the axis A of symmetry is preferably at a maximum possible distance fromthe high-temperature functional area HTB1 and usually lies in the centerof the integrated circuit chip.

Particularly in the case of wafer-to-wafer mounting, in which as yetundivided wafers are placed onto one another and connected to oneanother, such mirroring can be carried out very easily by means of twowafers provided with a plurality of integrated circuit chips beingplaced onto one another either by their rear sides or by their frontsides and being contact-connected.

In order to realize a three-dimensional multichip module, the wafersthus fixed to one another only have to be electrically connected to oneanother by means of a face-to-face bond and/or a through-Si via bondmethod known to the person skilled in the art and/or a combination of athrough-Si via method with micro-solder bumps.

In the case of the face-to-face bonds, the chip pads (metal pads) onadjacent chips are typically soldered to one another (e.g. at 300° C.under a protective gas atmosphere, two Cu pads can be soldered using Snas solder, an electrically conductive and stable Cu₃Sn phase beingformed, for example). In the case of the through-Si via bonds, thecontacts or vias of one chip, which are filled with metal and leadthrough the Si substrate, are typically bonded with metallic chip pads(metal pads) of the adjacent chip. Suitable metals for via filling andfor shaping the pads are, e.g., Cu, Ag, Au, Al, Ni, W, Co, Ti, Ta, orother readily conductive materials, metal alloys or combinations ofdifferent metals which can be reliably bonded together. Under certaincircumstances, it can also be advantageous to use, instead of themetal-to-metal bond, microscopic solder balls (micro-solder bumps) forconnecting the through-Si vias of one chip to the pads of the secondchip. The micro-solder bumps typically have a size of from 5 μm to a few100 μm and can be realized, for example, from Sn, SnPb, SnAg, SnAgCu,SnIn, SnBi, SnCu, In, BiPb, BiAg, BiCu, PbAg, PbCu or other metals ormetal combinations having a low melting point.

Such electrical connections for three-dimensional multichip modules aregenerally known to the person skilled in the art and, moreover, forexample, from the literature reference S. Pozder et al.: “Back-endcompatibility of bonding and thinning processes for a wafer-level 3Dinterconnect technology platform”, Proceedings of InternationalInterconnect Technology Conference (IITC) 2004, pages 102 to 104. Thewafer stacks thus fixed to one another can subsequently be divided orsawn apart in a customary manner, the desired three-dimensionalmultichip module thereby being obtained.

Although the costs for the three-dimensional multichip module can begreatly reduced by the above-described mirroring and processing at thewafer level, alternative production methods are also conceivable, inprinciple, in which, by way of example, an already singulated integratedcircuit chip is applied to a wafer (die-to-wafer) or two singulatedintegrated circuit chips as illustrated in FIG. 1 are mirrored about theaxis A of symmetry or stacked onto one another (die-to-die).

The last-mentioned production methods, in particular, i.e., die-to-dieand die-to-wafer, furthermore enable alternative stack arrangements orthree-dimensional multichip modules.

FIG. 2 shows a simplified perspective view of a three-dimensionalmultichip module in accordance with a second exemplary embodiment,identical reference symbols designating elements identical orcorresponding to those in FIGS. 1 and 5, for which reason a repeateddescription is dispensed with below.

In accordance with FIG. 2, the three-dimensional multichip module nowcomprises four integrated circuit chips IC1 to IC4 each once againhaving a high-temperature functional area HTB1 to HTB4 and alow-temperature functional area NTB1 to NTB4.

In accordance with FIG. 2, an optimum heat distribution in the multichipmodule is achieved by virtue of the fact that the arrangement of therespective high-temperature functional areas HTB1 to HTB4 is rotated by90 degrees, 180 degrees or 270 degrees with respect to one another. Toput it more precisely, the second high-temperature functional area HTB2can be arranged in a manner rotated by 90 degrees relative to the firsthigh-temperature functional area HTB1 with respect to a common midpointaxis M. In the same way, the third high-temperature functional area HTB3can be arranged in a manner rotated by 180 degrees, and the fourthhigh-temperature functional area HTB4 by 270 degrees, relative to thefirst high-temperature functional area HTB1, thus resulting in thedesired optimum heat distribution in the three-dimensional multichipmodule. It goes without saying that the high-temperature functionalareas can also be arranged in a manner rotated by 90, 180 or 270 degreeswith respect to one another in a different way and/or be combined with amirrored arrangement.

Once again, for mechanical and electrical connection, the materials andmethods used in the abovementioned literature reference, in particularBCB (benzocyclobutene), are used as mechanical connecting means andface-to-face bonds and/or through-Si via bonds are used as electricalconnections.

FIG. 3A shows a simplified perspective view of a three-dimensionalmultichip module in accordance with a third and fourth exemplaryembodiment, identical reference symbols designating elements identicalor corresponding to those in FIGS. 1 and 2, for which reason a repeateddescription is dispensed with below.

In accordance with the third exemplary embodiment according to FIG. 3A,the three-dimensional multichip module now comprises a first integratedcircuit chip IC1, which once again has at least one firsthigh-temperature functional area HTB1 with high emission of heat and onefirst low-temperature functional area NTB1 with low emission of heat,and at least one second integrated circuit chip IC2, likewise having asecond high-temperature functional area HTB2 with high emission of heatand a second low-temperature functional area NTB2 with low emission ofheat. The two chips IC1 and IC2 are once again arranged opposite oneanother with regard to their main surfaces and are mechanically andelectrically connected to one another.

In order to realize an optimum heat distribution in the multichipmodule, however, in accordance with this third exemplary embodiment, nomirroring or rotation of the high-temperature functional areas HTB withrespect to one another initially takes place, rather at least onelow-temperature chip IC5 having only one low-temperature functional areaNTB5 with low evolution of heat or emission of heat is arranged betweenthe first integrated circuit chip IC1 and the second integrated circuitchip IC2.

Preferably, the low-temperature chip IC5 additionally inserted betweenthe integrated circuit chips IC1 and IC2 is a so-called L2 cache memoryand in particular an SRAM memory, if microprocessor components inaccordance with FIG. 4 are used as integrated circuit chips IC1 and IC2.As an alternative, DRAM memories, EEPROM, flash memories (NAND flash,NOR flash, etc.) or other nonvolatile memories (NVM, e.g., as FERAM,MRAM, etc.) can be used as low-temperature functional areas orlow-temperature chips. Combinations of different memory types are alsopossible, both on one chip and on different chips.

By inserting the low-temperature chip IC5 having only low-temperaturefunctional areas NTB5 and therefore only low emission of heat, the heatdistribution in the multichip module can once again be made moreuniform, whereby heat dissipation of the multichip module can besimplified.

In this case, the heat dissipation is effected in a customary manner bymeans of active or passive cooling (i.e., heat sink, air cooling, liquidcooling, etc.).

In accordance with a fourth exemplary embodiment according to FIG. 3B,the exemplary embodiments in accordance with FIGS. 1 to 3A can, ofcourse, also be combined with one another, in which case, in addition tomirroring and/or rotation of the high-temperature functional areas, itis also possible to insert at least one low-temperature chip between twointegrated circuit chips having high-temperature functional areas.

Although an outstanding heat distribution is already obtained in thethree-dimensional multichip module in this way and hitherto unknown andpowerful multichip circuits can thus be realized cost-effectively, afurther advantage of the present invention consists in the particularelectrical connection of high-temperature functional elements in thehigh-temperature functional areas to low-temperature functional elementsin the low-temperature functional areas on another chip.

In accordance with another embodiment, a three-dimensional multichipmodule comprises a first integrated circuit chip IC1 and a secondintegrated circuit chip IC2, which are stacked one directly on top ofanother. In order to shorten signal propagation times and in order toreduce line capacitances and inductances, however, the wirings that areusually situated within a chip are now broken up and recreated. To putit more precisely, in one example, a high-temperature functional elementin the high-temperature functional area HTB1 of the first chip IC1 isnot wired to its customarily associated low-temperature functionalelement, but rather is connected to a chip-external low-temperaturefunctional element lying in the second low-temperature functional areaNTB2 on the second chip IC2.

This electrical connection is preferably realized only for the cases forwhich a total wiring length between the high-temperature functionalelement and the associated low-temperature functional element isshortened. This gives rise to novel functional units, which are nowrealized in chip-overarching fashion in a plurality of partial areas ofthe various chips. Both the signal propagation times and the parasiticcapacitances and inductances can thereby be significantly reduced,whereby the electrical properties of an overall circuit aresignificantly improved.

In particular when using the same microprocessor components inaccordance with FIG. 4 as mentioned in the introduction, the memorycells of the data cache memories 5 can therefore be assigned withsignificantly shortened wiring lengths to the adjoining processor cores,or processor cores situated in the vicinity, of other chips.

In this case, a total wiring length results as:

${\sum\limits_{n = 1}^{m}\left( {x_{n} + y_{n} + z_{n}} \right)},$

where x, y, z denote a respective wiring length in the x, y and zdirection of a respective chip and n=1 to m is used as an index of therespective chips ICn.

Such an electrical connection can once again also be carried out in thecase of the exemplary embodiment in accordance with FIGS. 3A and 3B,preferably high-temperature functional elements being connected tolow-temperature functional elements which are situated with the shortestpossible spacing in the three-dimensional space. This can be realized ina simple manner particularly when the high-temperature areas HTB1, HTB2of the chips IC1, IC2 are in each case rotated or mirrored with respectto one another, such that they adjoin different low-temperature areas ofthe chip 105 (FIG. 3B).

This results not only in a three-dimensional multichip module withimproved heat distribution but also in a circuit to be realized therebywith improved electrical properties (in particular reduced signalpropagation times and capacitances and inductances).

Although the invention has been described above on the basis of amicroprocessor component in accordance with FIG. 4, it is in particularalso applicable to microcontroller components having at least onecontroller core and generally to data processing components having oneor more processor cores or controller cores as high-temperaturefunctional areas and other memory areas as low-temperature functionalareas.

Furthermore, the present invention is also applicable to powersemiconductor components having areas with high evolution of heat whichare used in particular in motor vehicle electronics.

1. A three-dimensional multichip module comprising: a first integratedcircuit chip having a first high-temperature functional area with highemission of heat and a first low-temperature functional area with lowemission of heat; a second integrated circuit chip having a secondhigh-temperature functional area with high emission of heat and a secondlow-temperature functional area with low emission of heat; and a thirdintegrated circuit chip having a third low-temperature functional areaand no high-temperature functional area, the third integrated circuitchip being arranged between the first integrated circuit chip and thesecond integrated circuit chip, wherein the first high temperaturefunctional area of the first integrated circuit chip is disposed at afirst side of the three-dimensional multichip module and wherein thesecond high temperature functional area of the second integrated circuitchip is disposed on a second side of the three-dimensional multichipmodule.
 2. The three-dimensional multichip module as claimed in claim 1,wherein the first integrated circuit chip is identical to the secondintegrated circuit chip.
 3. The three-dimensional multichip module asclaimed in claim 1, wherein the first integrated circuit chip comprisesa first high-temperature functional element in the high-temperaturefunctional area, wherein the third integrated circuit chip comprises athird low-temperature functional element in the third low-temperaturearea, and wherein the first high-temperature functional element iselectrically connected to the third low-temperature functional element.4. The three-dimensional multichip module as claimed in claim 1, whereinthe first high-temperature functional area and the secondhigh-temperature functional area comprise microprocessor components. 5.The three-dimensional multichip module as claimed in claim 1, whereinthe first side of the three-dimensional multi-chip and the second sideof the three-dimensional multi-chip are opposite sides.
 6. Thethree-dimensional multichip module as claimed in claim 1, wherein thethird low-temperature functional area comprises cache memory units. 7.The three-dimensional multichip module as claimed in claim 1, whereinthe third low-temperature functional area comprises SRAM units.
 8. Thethree-dimensional multichip module as claimed in claim 1, wherein thethird low-temperature functional area comprises DRAM unit.
 9. Thethree-dimensional multichip module as claimed in claim 1, wherein thethird low-temperature functional area comprises flash memory units. 10.The three-dimensional multichip module as claimed in claim 1, whereinthe first and second integrated circuit chips are electrically connectedvia the third integrated circuit chip.
 11. The three-dimensionalmultichip module as claimed in claim 1, wherein the third integratedcircuit chip comprises a heat sink, air cooling or liquid cooling.
 12. Athree-dimensional multichip module comprising: a first processor core ina first high-temperature functional area with high emission of heat in afirst integrated circuit chip; a second processor core in a secondhigh-temperature functional area with high emission of heat in a secondintegrated circuit chip; a third processor core in a thirdhigh-temperature functional area with high emission of heat in a thirdintegrated circuit chip; and a fourth processor core in a fourthhigh-temperature functional area with high emission of heat in a fourthintegrated circuit chip; wherein the first processor core is disposed ina first corner of the three-dimensional multichip module, wherein thesecond processor core is disposed in a second corner of thethree-dimensional multichip module, wherein the third processor core isdisposed in a third corner of the three-dimensional multichip module,and wherein the fourth processor core is disposed in a fourth corner ofthe three-dimensional multichip module.
 13. The three-dimensionalmultichip module as claimed in claim 12, wherein the first integratedcircuit chip comprises a first memory unit in a first low-temperaturefunctional area with a low emission of heat, wherein the secondintegrated circuit chip comprises a second memory unit in a secondlow-temperature functional area with a low emission of heat, wherein thethird integrated circuit chip comprises a third memory unit in a thirdlow-temperature functional area with a low emission of heat, and whereinthe fourth integrated circuit chip comprises a fourth memory unit in afourth low-temperature functional area with a low emission of heat. 14.The three-dimensional multichip module as claimed in claim 12, whereinthe first integrated circuit chip comprises bus control units in a firstlow-temperature functional area with a low emission of heat, wherein thesecond integrated circuit chip comprises bus control units in a secondlow-temperature functional area with a low emission of heat, wherein thethird integrated circuit chip comprises third bus control units in athird low-temperature functional area with a low emission of heat, andwherein the fourth integrated circuit chip comprises fourth bus controlunits in a fourth low-temperature functional area with a low emission ofheat.
 15. The three-dimensional multichip module as claimed in claim 12,wherein the first to fourth integrated circuit chips are electricallyconnected by through via bonds.
 16. The three-dimensional multichipmodule as claimed in claim 12, wherein at least two of the first tofourth integrated circuit chips are electrically connected by aface-to-face bond.
 17. A three-dimensional multichip module comprising:a first integrated circuit chip having a first processor core and afirst cache memory; and a second integrated circuit chip having a secondprocessor core and a second cache memory, the first and secondintegrated circuit chips being electrically connected to one another andbeing stacked to each other such that the first processor core isarranged adjacent the second cache memory and the second processor coreis arranged adjacent the first cache memory.
 18. The three-dimensionalmultichip module as claimed in claim 17, wherein the first integratedcircuit chip and the second integrated circuit chip are face-to-facebonded.
 19. The three-dimensional multichip module as claimed in claim17, wherein a first total wiring length of the electrical connectionbetween the first processor core and the second cache memory is shorterthan a second total wiring length between the first processor core andthe first cache memory.
 20. The three-dimensional multichip module asclaimed in claim 19, wherein each, the first wiring length and thesecond total wiring length, is calculated according to${\sum\limits_{n = 1}^{m}\left( {x_{n} + y_{n} + z_{n}} \right)},$ withx, y, z as respective wiring length in an x, y and z direction of arespective chip and n=1 to m as index of the respective chip.